View AME5130AEEVADJ_433684.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n General Description
The AME5130 is a fixed off-time step-up DC/DC converter in a small 5-lead SOT-25 package.The AME5130 is ideal for LCD panels requiring low current and high efficiency as well as LED applications for cellular phone backlighting, PDAS,and other hand-held devices. The low 400ns off-time allows the use of tiny external components. AME5130 can drive up 8 white LEDs from a single LiIon battery DC 2V to 5.5V; can be turned on by putting more than 1V at pin 4(RUN). To control LED brightness, the LED current can be pulsed by applying a PWM (pulse width modulated) signal with a frequency range of 100Hz to 50KHz to the RUN pin.
n Typical Application
V IN 2.5V-4.2V 5 V IN L 10H 1 SW ILED COUT 4.7F Ceramic AME5130 D Option for 6LEDs
CIN 4.7F Ceramic
>1.1V 4 RUN 0V GND 2 FB
3 R2 80
* ILED =VFB/R2
n Features
l 0.7 internal switch l Uses small surface mount components l Adjustable output voltage up to 20V l 2V to 5.5V input range l Input undervoltage lockout l 0.01A shutdown current l Small 5-Lead SOT-25 package
Figure 1G Six White LEDs Application in Li-lon Battery
V IN 2.5V-4.2V
L 15H
D
20V 20mA
5 CIN 4.7F Ceramic 4 VIN
1 SW 3
R1 510K
AME5130 FB RUN GND 2
COUT 4.7F Ceramic
R2 33K
n Applications
l l l l l White LED Back-Lighting Hand-held Devices Digital Cameras Portable Applications LCD Bias Power Figure 2G Typical 20V Application
1
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Function Block Diagram
L VIN CIN VIN SW D
VOUT
COUT
V OUT Vref=1.23 Enable Comp
R1
FB
+
R2 400ns one Shot Internal Soft Start
+ CL Comp Current sensing
Driver Under Voltage Lockout Logic control
RUN
GND
Figure 3G AME5130 Block Diagram
2
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Pin Configuration
SOT-25 Top View
5 4
AME5130 1. SW 2. GND
AME5130
3. FB 4. RUN 5. VIN * Epoxy: Conductive
1
2
3
n Pin Description
Pin #
1
Pin Name
SW
Pin Description
Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. Ground. Tie directly to ground plane. Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using:
2
GND
3
FB
V R1 = R 2 out - 1 1 . 23V
Connect the ground of the feedback network to an AGND(Analog Ground) plane which should be tied directly to the GND pin.
4
RUN
Shutdown control input, active low. The shutdown pin is an active low control. Tie this pin above 1V to enable the device. Tie this pin below 0.4V to turn off the device. Analog and Power input. Input Supply Pin. Bypass this pin with a capacitor as close to the device as possible.
5
VIN
3
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Ordering Information AME5130 x x x x x x
Special Feature Output Voltage Number of Pins Package Type Operating Temperature Range Pin Configuration
Pin Configuration A 1. SW 2. GND 3. FB 4. RUN 5. VIN
Operating Package Type Temperature Range E: -40OC to 85OC E: SOT-2X
Number of Pins V: 5
Output Voltage
Special Feature
ADJ: Adjustable
Z:
Lead free
n Ordering Information
Part Number
AME5130AEEVADJ AME5130AEEVADJZ
Marking*
BCLww BCLww
Output Voltage
ADJ ADJ
Package Operating Temp. Range
SOT-25 SOT-25 -40OC to +85OC -40OC to +85OC
Note: ww represents the date code and pls refer to Date Code Rule before Package Dimension. * A line on top of the first letter represents lead free plating such as BCL. Please consult AME sales office or authorized Rep./Distributor for the availability of package type.
4
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Absolute Maximum Ratings
Parameter
Input Supply Voltage RUN, VFB Voltages SW Voltage N-Channel Switch Sink Current ESD Classification
Symbol
VIN VRUN ,VFB VSW ISW
Maximum
6 VIN VOUT+0.3 800 B
Unit
V V V mA
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device
n Recommended Operating Conditions
Parameter
Ambient Temperature Range Junction Temperature
Rating
-40 to +85 -40 to +125
Unit
o
C C
o
n Thermal Information
Parameter
Thermal Resistance* (Junction to Case) Thermal Resistance (Junction to Ambient) Internal Power Dissipation (T = 100oC) Maximum Junction Temperature Lead Temperature (Soldering 10sec) * The case point of JC is on the center of Molding Compound. SOT-25 Conductive
Package
Die Attached Symbol
JC JA
PD
Maximum
81
Unit
o
C/W
260
400 150 300
mW
o
C C
o
5
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Electrical Specifications
VIN=2.2V, RUN = VIN, TA = 25oC Unless otherwise noted. Parameter Device Disabled Device Enabled Shutdown Feedback Trip Point Switch Current Limit FB Pin Bias Current Input Voltage Range Switch RDSON Switch Off Time VFB ICL VIN RDSON TOFF RUN = VIN , TJ = 25 C RUN Pin Current ISD RUN = VIN , TJ = 125 C RUN = GND Switch Leakage Current Input Undervoltage Lockout Feedback Hysteresis RUN LOW (Shutdown) RUN High (Enable the device) IL UVP VFB Hysteresis VSW = 20V ON/OFF Threshold
o o
Symbol
Test Condition FB = 1.3V
Min
Typ 64 69 0.01
Max 80 90 2 1.261 610 0.7 5.5
Units
IQ
FB = 1.15V RUN = 0V 1.199 IOUT=20mA, VOUT=20V FB = 1.23V 2 490
A
1.23 550 0.2
V mA A V ns nA nA nA
0.7 400 0 15 0 0.05 1.6 8
1.6
5.0
V mV
0.4 RUN Threshold 1
V
V
6
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Electrical Specifications
The AME5130 features a constant off-time control scheme. Operation can be best understood by referring to Figure 3. When the voltage at the FB pin is less than 0.9V, the Enable Comp in Figure 3 enables the device and the NMOS switch is turmed on pulling the SW pin to ground. When the NMOS switch is on, current is supplied by the output capacitor C OUT. Once the current in the inductor reaches the peak current limit, the 400ns One Shot turns off the NMOS switch. The SW voltage will then rise to the output voltage plus a diode drop and the inductor current will begin to decrease as shown in Figure 3. During this time the energy stored in the inductor is transferred to C OUT and the load. After the 400ns off-time the NMOS switch is turned on and energy is stored in the inductor again. This energy transfer from the inductor to the output causes a stepping effect in the output ripple. This cycle is continued until the voltage at FB reaches 1.23V. When FB reaches this voltage, the enable comparator then disables the device turning off the NMOS switch and reducing the Iq of the device to 64 A. The load current is then supplied solely by C OUT indicated by the gradually decreasing slope at the output. When the FB pin drops slightly below 1.23V, the enable comparator enables the device and begins the cycle described previously. The RUN pin can be used to turn off the AME5130 and reduce the Iq to 0.01A. In shutdown mode the output voltage will be a diode drop lower than the input voltage.
n Application Information
INDUCTOR SELECTION The appropriate inductor for a given application is calculated using the following equation:
V - VIN(min) + VD TOFF L = OUT ICL
Where VD is the schottky diode voltage, I CL is the switch current limit found in the Typical Performance Characteristics section, and T OFF is the switch off time. When using this equation be sure to use in minimum input voltage for the application, such as for battery powered applications. Choosing inductors with low ESR decrease power lossed and increase efficiency. Care should be taken when choosing an inductor. For applications that require an input voltage that approaches the output voltage, such as when converting a Li-ion battery voltage to 5V, the 400ns off time may not be enough time to discharge the energy in the inductor and transfer the energy to the output capacitor and load. This can cause a ramping effect in the inductor current waveform and an increased ripple on the output voltage. Using a smaller inductor will cause the I PK to increase and will increase the output voltage ripple further. This can be solved by adding a 4.7pF capacitor across the R1 feedback resistor (Figure 3) and slightly increasing the output capacitor. A smaller inductor can then be used to ensure proper discharge in the 400ns off time. DIODE SELECTION To maintain high efficiency, the average current rating of the schottky diode should be larger than the peak inductor current, I PK. Schottky diodes with a low forward drop and fast switching speeds are ideal for increasing efficiency in portable applications. Choose a reverse breakdown of the schottky diode larger than the output voltage.
7
AME, Inc.
AME5130
CAPACITOR SELECTION Choose low ESR capacitors for the output to minimize output voltage ripple. Multilayer ceramic capacitors are the best choice. For most applications, a 1F ceramic capacitor is sufficient. For some applications a reduction in output voltage ripple can be achieved by increasing the output capacitor. Local bypassing for the input is needed on the AME5130. Multilayer ceramic capacitors are a good choice for this as well. A 4.7F capacitor is sufficient for most applications. For additional bypassing, a 100nF ceramic capacitor can be used to shunt high frequency ripple on the input.
Micropower Step-Up DC/DC Converter
LAYOUT CONSIDERATIONS The input bypass capacitor C IN, as shown in Figure 3, must be placed close to the IC. This will reduce copper trace resistance which effects input voltage ripple of the IC. For additional input voltage filtering, a 100nF bypass capacitor can be placed in parallel with C IN to shunt any high frequency noise to ground. The output capacitor, C OUT, should also be placed close to the IC. Any copper trace connections for the C OUT capacitor can increase the series resistance, which directly effects output voltage ripple. The feedback network, resistors R1 and R2, should be kept close to the FB pin to minimize copper trace connections that can inject noise into the system. The ground connection for the feedback resistor network should connect directly to an analog ground plane. The analog ground plane should tie directly to the GND pin. If no analog ground plane is available, the ground connection for the feedback network should tie directly to the GND pin. Trace connections made to the inductor and schottky diode should be minimized to reduce power dissipation and increase overall efficiency.
8
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Application Information
VIN 2.5V-4.2V
L 10H
D
Option for 8LEDs
5 CIN 4.7F Ceramic >1.1V 4 0V VIN
1 SW COUT 1F Ceramic COUT 1F Ceramic
AME5130 RUN GND 2 R2 80 R3 80 FB 3
Figure4: Eight White LEDs Application in Li-Ion Battery
VIN 2.5V-4.2V 5 C IN 4.7F Ceramic 4 VIN
L 2.2H
D
5V 120mA
1 SW 3
R1 1M
CF B 4.7pF
AME5130 FB RUN GND 2
C OUT 4.7F Ceramic
R2 330k
Figure5: Li-Ion 5V Application
9
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Application Information
VIN 2.5V-4.5V 5 C IN 4.7F Ceramic 4 VIN
L 10H
D
12V 40mA
1 SW 3
R1 240K
AME5130 FB RUN GND 2
C OUT 4.7F Ceramic
R2 27K
Figure6: Li-Ion 12V Application
VIN 5V 5 C IN 4.7F Ceramic 4 VIN
L 10H
D
12V 145mA
1 SW 3
R1 240K
AME5130 FB RUN GND 2
C OUT 4.7F Ceramic
R2 27K
Figure7: 5V to 12V Application
10
AME, Inc.
AME5130
Switch Current Limit vs. VIN
800 750
90 85 80 V IN =4.2V V IN =3.3V VIN=2.5V
Micropower Step-Up DC/DC Converter
Efficiency vs. Load Current
Switch Cur rent Lim it (mA)
700 650 600 550 500 450 400 350 2 2.5 3 3.5 4 4.5 5 5.5 6
TA=25 C
O
E FFICIENCY (% )
75 70 65 60 55 50 0.5 5 10 15
VOUT=20V
20 25 30 35 40 45
VIN(V)
IOUT (mA)
Efficiency vs. Load Current
90 85 80
95
Efficiency vs. Load Current
90 85
VIN=5V VIN=3.3V
V IN=4.2V VIN=3.3V VIN=2.5V
V IN=4.2V
EFFICIENCY (% )
EFFICIENCY (% )
75 70 65 60 55 50 45 40 0.5
V IN=2.5V
80 75 70 65 60 55 50
VOUT =12V
4 8 20 40 55 70 80 110 115 140 145
45 40 0.5 3 6 9 20 35 50
VOUT=5V
80 110 140 160 190 220 250
IOUT (mA)
IOUT (mA)
Enable Current vs. VIN (Part Switching)
140 130 120
Disable Current vs. VIN (Part Not Switching)
140 130
Enable Cirrent (uA)
Disable Cur rent (uA)
TA=25
oC
120 110 100 90 80 70 60 50 40 2 2.5 3 3.5 4
TA=25o C
110 100 90 80 70 60 50 40
TA=85 oC
TA=-40 oC
TA=85 oC
TA=-40 oC
4.5
5
5.5
6
2
2.5
3
3.5
4
4.5
5
5.5
6
VIN (V)
V IN (V)
11
AME, Inc.
AME5130
SHDN Threshold vs. VIN
1.05 1.0
Micropower Step-Up DC/DC Converter
Switch Rdson vs. VIN
1.2 1.1 1
TA=-40 o C
SHDN THRESHO LD (V )
0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Rdson ( )
oC T A=25
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 2 2.5 3 3.5 4 4.5 5 5.5 6
TA=25 o C
TA=85 oC
TA=85 oC
TA=-40oC
VIN (V)
VIN (V)
Efficiency vs. VIN
95
Efficiency vs. VIN
90
90
85
EFFICIENCY(%)
85
EFFICIENCY(%)
TA=25oC
TA=25oC
80
80
6 LEDs IOUT = 15mA
75
8 LEDs IOUT = 30mA
75
70
70 2 2.5 3 3.5 4 4.5 5
65 2 2.5 3 3.5 4 4.5 5
Vin (V)
Vin (V)
FB Trip Point and FB Pin Current vs Temperature
1.25 0.36
Output Voltage vs Load Current
12.4
Feedback Biascur rent (uA)
Feedback Trip Point (V)
0.35 1.24
0.34 1.23 0.33 0.32 0.31 1.21 0.30 1.20 -40 0.29 85
OUTPUT VOLTAGE (V)
V
12.3
VIN =4.2V
C OUT =4.7uF VOUT=12V
12.2 VIN =2.5V 12.1 V IN =3.3V 12 VIN =5V
1.22
A
11.9
-20
0
25
55
11.8 0.5
4
8
20
40
50
70
80
110 115 145
150
Junction Temperature (o C)
IOUT (mA)
12
AME, Inc.
AME5130
Typical Switching Waveform
Micropower Step-Up DC/DC Converter
Typical Switching Waveform
1
1
2
2
3
3
VOUT = 19.4V, VIN = 4.2VF 6 LEDs IOUT = 15mA 1) VSW, 20V / div, DC 2) Inductor current, 500mA / div, DC 3) VOUT, 100mV / div, AC
VOUT = 13.25V, VIN = 4.2VF 8 LEDs IOUT = 30mA 1) VSW, 20V / div, DC 2) Inductor current, 500mA / div, DC 3) VOUT, 100mV / div, AC
Start-Up/Shutdown
Start-Up/Shutdown
2
1
3
3
1
2
VOUT = 20V, VIN = 2.5V 1) Vout, 100mV/div.AC 2) Vsw,20V/div,DC 3) Inductor Current 500mA/div,DC T=20s/div
VOUT = 20V, VIN = 2.5V 1) RUN, 1V/div,DC 2) VOUT, 20V/div,DC 3) IL, 200mA/div,DC T=400s/div RL=1.3k
13
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Date Code Rule
Marking A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A Date Code W W W W W W W W W W W W W W W W W W W W Year xxx0 xxx1 xxx2 xxx3 xxx4 xxx5 xxx6 xxx7 xxx8 xxx9
n Tape and Reel Dimension
SOT-25
P
W AME PIN 1 AME
Carrier Tape, Number of Components Per Reel and Reel Size Package SOT-25 Carrier Width (W) 8.00.1 mm Pitch (P) 4.00.1 mm Part Per Full Reel 3000pcs Reel Size 1801 mm
14
AME, Inc.
AME5130
Micropower Step-Up DC/DC Converter
n Package Dimension
SOT-25
Top View D
L
Side View
SYMBOLS A A1
MILLIMETERS MIN MAX
INCHES MIN MAX
1.20REF 0.00 0.30 2.70 1.40 0.15 0.55 3.10 1.80
0.0472REF 0.0000 0.0118 0.1063 0.0551 0.0059 0.0217 0.1220 0.0709
E
b D E
S1 e c1
H
e H L 1
1.90 BSC 2.60 3.00
0.07480 BSC 0.10236 0.11811 0.0146BSC
o
0.37BSC 0
o
Front View
A
10
0o
10o
S1
0.95BSC
0.0374BSC
b
A1
15
E-Mail: sales@ame.com.tw
Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. (c) AME, Inc. , October 2005 Document: 1015-DS5130-C
www.ame.com.tw
AME, Inc.
Corporate Headquarter
Taipei 114, Taiwan. Tel: 886 2 2627-8687 Fax: 886 2 2659-2989
Analog Microelectronics, Inc.
3100 De La Cruz Blvd., Suite 201 Santa Clara, CA. 95054-2046 Tel : (408) 988-2388 Fax: (408) 988-2489
U.S.A. (Subsidiary)
2F, 302 Rui-Guang Road, Nei-Hu District

▲Up To Search▲

Price & Availability of AME5130AEEVADJ

	To Download AME5130AEEVADJ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .